Analysis of Propagation Delay Deviation under Process Induced Threshold Voltage Variation
نویسندگان
چکیده
منابع مشابه
Analysis of Propagation Delay Deviation under Process Induced Threshold Voltage Variation
Process variation has become a major concern in the design of many nanometer circuits, including interconnect pipelines. The primary sources of manufacturing variation include Deposition, Chemical Mechanical Planarization (CMP), Etching, Resolution Enhancement Technology (RET). Process variations manifest themselves as the uncertainties of circuit performance, such as delay, noise and power con...
متن کاملPARADE: PARAmetric Delay Evaluation under Process Variation
Under manufacturing process variation, the circuit delay varies with process parameters. For delay test and timing verification under process variation, it is necessary to model the variational delay as a function of process variables. However, conventional methods to generate such functions are either slow or inaccurate. In this paper, we present a number of new methods for fast parametric del...
متن کاملMonte Carlo Analysis of Propagation Delay Deviation due to Process Induced Line Parasitic Variations in Global VLSI Interconnects
Process variation has recently emerged as a major concern in the design of circuits including interconnect in current nanometer regime. Process variation leads to uncertainties of circuit performances such as propagation delay. The performance of VLSI/ULSI chip is becoming less predictable as MOSFET channel dimensions shrinks to nanometer scale. The reduced predictability can be ascribed to poo...
متن کاملdegradation of oil impregnated paper insulation under influence of repetitive fast high voltage impulses
در طی سالهای اخیراستفاده ازمنابع انرژی تجدید پذیر در شبکه های مدرن بنا به دلایل زیست محیطی و اقتصادی به طور گسترده استفاده شده است همچون نیروگاههای بادی و خورشیدی .ولتاژتولیدی این نیروگاهها اغلب به فرم dc می باشد وادوات الکترونیک قدرت به عنوان مبدل و پل بین شکل موج dc وac استفاده می شوند.این پروسه باعث ایجاد پالسهایی برروی شکل موج خروجی می شود که می تواند وارد تجهیزات قدرت همچون ترانسفورماتور ی...
15 صفحه اولOptimization of input process parameters variation on threshold voltage in 45 nm NMOS device
College of Engineering, Universiti Tenaga Nasional (UNITEN), Kajang, Selangor, Malaysia. Faculty of Engineering and Built Environment, Universiti Kebangsaan Malaysia (UKM), Bangi, Selangor, Malaysia. School of Microelectronic Engineering, Universiti Malaysia Perlis (UniMAP), Arau Perlis, Malaysia. Indian Institute of Technology (IIT), Bombay, Powai, Mumbai, India. Faculty of Electronic and Comp...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: International Journal of Computer Applications
سال: 2011
ISSN: 0975-8887
DOI: 10.5120/2216-2823